SPIN TRANSISTOR USING DOUBLE CARRIER SUPPLY LAYER STRUCTURE

摘要

PURPOSE: A spin transistor with a double charge-supply layer structure is provided to improve the vertical symmetry of electron distribution in an energy band structure and a channel by arraigning a double charge-supply layer for binary electron gas structure channel layer. CONSTITUTION: Cladding layers are respectively arranged in the upper side and the lower side of the binary electron gas structure of a channel layer(1). A semiconductor substrate includes a lower cladding layer(3). Ferromagnetic source and drain which are spaced apart from each other are arranged to the longitudinal direction of the channel layer. A gate voltage is applied to a gate electrode to control the spin of the electron which passes through the channel layer. A first charge-supply layer(4) supplies a carrier to the channel layer. A spin transistor is arranged between the upper cladding layer(3') and the channel layer. The spin transistor includes a second charge-supply layer(4').