Inductively Coupled Plasma Chemical Vapor DepositionICP-CVD Apparatus, System and Method for Fabricating P-Type ZnO Films without Any Doping Process by Using ICP-CVD Apparatus, and Optical Power Compound Semiconductor,申请号KR20070110937-传众专利搜索

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发明名称	Inductively Coupled Plasma Chemical Vapor DepositionICP-CVD Apparatus, System and Method for Fabricating P-Type ZnO Films without Any Doping Process by Using ICP-CVD Apparatus, and Optical Power Compound Semiconductor
摘要
申请公布号	KR100951581(B1)	申请公布日期	2010.04.09
申请号	KR20070110937	申请日期	2007.11.01
申请人		发明人
分类号	H01L21/205;H01L21/316	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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