| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a gate bridge from generating on a semiconductor device by reacting a cobalt layer and a conductive layer in order to form a metal gate layer and subsequently removing the cobalt oxide with a cleaning process. CONSTITUTION: A tunnel insulation layer(101), a first conductive layer(104), a dielectric layer(103), and a second conductive layer(102) are stacked on a semiconductor substrate(100) to form a gate pattern. An insulation layer is formed on the gate pattern. The insulation layer is etched to expose the upper surface of the second conductive layer. A metal layer is formed on the insulation layer along the exposed upper surface of the second conductive layer. The metal layer and the upper surface of the second conductive layer are reacted to form a metal gate layer(104A). After the metal layer is removed, a cleaning process is performed to remove residue from the metal layer.
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