| 摘要 |
PROBLEM TO BE SOLVED: To provide an electro-optical apparatus to be produced relatively easily, capable of effectively reducing the leak current in a transistor having an LDD structure. SOLUTION: A TFT 30 includes a semiconductor film 1a having a channel region 1a', a data line side source drain region 1d, a pixel electrode side source drain region 1e, a data line side LDD region 1b and a pixel electrode side LDD region 1c, and a gate electrode 3a. At least one of the data line side LDD region 1b and the pixel electrode side LDD region 1c is formed at least partially wider than the channel region 1a'. COPYRIGHT: (C)2010,JPO&INPIT |
