| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element wherein the occurrence of crystal defects is prevented and TM mode oscillation within a range free from degradation in characteristics is possible. SOLUTION: An n-type AlGaAs clad layer 2, an n-type AlGaAs beam diffusion layer 3, an n-type AlGaAs light guide layer 4, an MQW active layer 5, a p-type AlGaAs light guide layer 6, a p-type AlGaAs beam diffusion layer 7, a p-type AlGaAs first clad layer 8, an InGaP etching stop layer 9, a p-type AlGaAs second clad layer 10, and a p-type AlGaAs contact layer 11 are formed on a GaAs substrate 1. The MQW active layer 5 includes a multiple quantum well structure constituted of barrier layers and well layers having a tensile strain, and a layer thickness of each well layer is larger than that of each barrier layer, and the layer thickness of at least one well layer is made different from those of the other well layers. COPYRIGHT: (C)2010,JPO&INPIT
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