发明名称 MEMORY DEVICE AND MEMORY CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To achieve effective leveling related with a non-volatile semiconductor memory. SOLUTION: In a storage device 6, a microprocessor 11 exchanges an alternate block whose rewrite frequency is prescribed frequency (for example, 90,000 times) or more in a semiconductor memory 2 with a data block whose non-rewrite time until that point of time is longer than a predetermined time among data blocks. Thus, it is possible to level the rewrite frequency of each block. That is, it is possible to achieve more effective standardization. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010079860(A) 申请公布日期 2010.04.08
申请号 JP20080250815 申请日期 2008.09.29
申请人 HITACHI LTD;HITACHI INFORMATION & CONTROL SOLUTIONS LTD 发明人 TAKAHASHI YUZURU;NAKANO YOSHIHIRO;FUKUMARU HIROAKI;UMEHARA TAKASHI;NAKAMURA HIROKI;ICHIMURA MAMORU;FUJIMATA YOSHIMI;KASHIWABARA HIROSHIGE;OBARA KATSUHIRO;ABE MIKI
分类号 G06F12/16;G06F12/00;G06F12/02 主分类号 G06F12/16
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