MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, ELEMENT HAVING MEMORY ARRAY STRUCTURE, AND MEMORY ARRAY

摘要

PROBLEM TO BE SOLVED: To solve a problem in an inclined evaporation type nano gap switch element in the prior art: the switching electric characteristics change in an ambient and finally the switching characteristics are not exhibited in the element having this structure because variations are caused in electric characteristics of a large number of two electrodes due to site dependency on a wafer and dependency per wafer which appear on a distance between the two electrodes. SOLUTION: In the memory element having a laminate structure configured by at least a first conductive film 130, a first insulating film 110 and a second conductive film 230, an opposite portion between the first conductive film 130 and the second conductive film 230 is provided via a first hole 180 provided in the first insulating film 110 and the memory element is configured by the first conductive film 130, the second conductive film 230 and a gap g between and the first conductive film 130 and the second conductive film 230 in the first hole 180. The first hole 180 and the gap g may be interrupted from an ambient air. COPYRIGHT: (C)2010,JPO&INPIT