发明名称 |
HYBRID SHALLOW TRENCH ISOLATION FOR HIGH-K METAL GATE DEVICE IMPROVEMENT |
摘要 |
A method for fabricating a semiconductor device with improved performance is disclosed. The method comprises providing a substrate including a first region and a second region; forming at least one isolation region having a first aspect ratio in the first region and at least one isolation region having a second aspect ratio in the second region; performing a high aspect ratio deposition process to form a first layer over the first and second regions of the substrate; removing the first layer from the second region; and performing a high density plasma deposition process to form a second layer over the first and second regions of the substrate.
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申请公布号 |
US2010087043(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20080330347 |
申请日期 |
2008.12.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG CHUNG LONG;THEI KONG-BENG;CHUANG HARRY |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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