| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a sputtering target in which oxygen present therein is uniformly dispersed, as a Cu alloy target containing oxygen for forming a wiring film having excellent adhesion with a glass substrate and an Si based under layer film and excellent barrier properties, and to provide a sputtering target produced by the production method. Ž<P>SOLUTION: In the method for producing the sputtering target, Cu powder subjected to heating treatment in an oxygen-containing atmosphere and into which oxygen is introduced and at least one or more kinds of additional element powders selected from elements having an oxide forming free energy smaller than that of Cu are mixed, and the mixture is thereafter subjected to pressure sintering to obtain a sputtering target material, and when the total of the Cu and additional element(s), and oxygen is defined as 100 atomic%, the sputtering target material contains 0.05 to 10 atomic% of the additional element(s), and contains the oxygen in an amount of ≥5.0 atomic% and equal to or below the stoichiometric amount of an oxide formed by the Cu and additional element(s). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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