<p>A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light- emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.</p>
申请公布号
WO2010037577(A1)
申请公布日期
2010.04.08
申请号
WO2009EP59552
申请日期
2009.07.24
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;SCHWARZ, KLAUS;MADAN, ANITA;LIU, XIAO, HU;LAI, CHUNG WOH;SCOTT, JOHN, CAMPBELL;LI, JINGHONG