SILICON OXYNITRIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE

摘要

A process for producing a silicon oxynitride film having a hydrogen atom concentration of 9.9 × 1020 atoms/cm3 or less as measured by secondary ion mass spectrometry (SIMS), which comprises carrying out plasma CVD by employing a plasma CVD device in which a microwave can be introduced into a treatment vessel with a planar antenna having multiple pores thereon to generate a plasma and by using a treatment gas comprising an SiCl4 gas, a nitrogen gas and an oxygen gas, wherein the pressure in the treatment vessel is set at 0.1 to 6.7 Pa inclusive.