| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a variable resistive element which is suitable for the shunt resistor of a magneto-resistance effect element, and whose resistance value can be set correspondingly to the resistor value (RA value) of the magneto-resistance effect element after it is worked as the element. Ž<P>SOLUTION: The variable resistive element 10 is constituted of a multilayer film containing a first fixed magnetic layer 13, and is provided with a TMR film 2 or a GMR film 3 whose uppermost layers are formed of free magnetic layers 15, and is provided with a first ferromagnetic layer 17 or a first ferromagnetic layer 17 which uses a non-magnetic layer 16 as a ground layer on the TMR film 2 or the GMR film 3. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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