| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a silicon single crystal ingot, by which a dislocation-free silicon single crystal ingot having high qualities over the whole length can be grown even when the silicon single crystal ingot has a large diameter of ≥450 mm in the cylindrical part. Ž<P>SOLUTION: The silicon single crystal ingot 25 is grown by Czochralski process by rotating a quartz crucible 13 reserving a silicon melt 12 at a predetermined rotation speed and pulling the silicon single crystal ingot 25 from the silicon melt 12 while rotating the ingot at a predetermined rotation speed in the opposite direction to the quartz crucible 13. When the cylindrical part of the silicon single crystal ingot 25 is ≥450 mm, the average rotation speed of the silicon single crystal ingot 25 is set to ≤10 rpm, and the average rotation speed of the quartz crucible is set to ≤10 rpm. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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