METHOD FOR MANUFACTURING MAGNETORESISTIVE ELEMENT

摘要

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method improving an MR ratio of a magnetoresistive element by preparing a tunnel barrier layer having an optimum composition ratio in stoichiometry and high crystallinity. Ž<P>SOLUTION: The manufacturing method includes: a step of forming a pinned magnetic layer (CoFeB); a step of forming a non-magnetic intermediate layer (MgO); and a step of forming a magnetic free layer (CoFeB). The step of forming the non-magnetic intermediate layer (MgO) includes a step of forming a stoichiometric magnesium oxide film by performing high-frequency sputtering a magnesium oxide target under process gas pressure of 0.0400 to 26.66 Pa. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž