NONVOLATILE STORAGE ELEMENT AND NONVOLATILE STORAGE DEVICE USING SAME

摘要

A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107).  The variable resistance layer has a multilayer structure which includes at least three layers, i.e., a first transition metal oxide layer (104), a second transition metal oxide layer (106) having oxygen concentration higher than that of the first transition metal oxide layer (104), and a transition metal nitride layer (105).  The second transition metal oxide layer (106) is in contact with the first electrode (103) or the second electrode (107), and the transition metal nitride layer (105) is disposed between the first transition metal oxide layer (104) and the second transition metal oxide layer (106).