SEMICONDUCTOR MEMORY DEVICE INCLUDING POWER DECOUPLING CAPACITOR AND PROCESSING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device including a power decoupling capacitor and a method for manufacturing the same are provided to improve the integrity and the reliability of the device using a transistor in a peripheral circuit region as the power decoupling capacitor. CONSTITUTION: A transistor is formed in the n-type well region(221) of a substrate. The transistor is a p-type transistor. A first conductor is located on the transistor. A second conductor and a third conductor are located on the first conductor. A dielectric(226) is located between the first conductor and the second conductor or between the first conductor and the third conductor. A first voltage is applied to the second conductor. A second voltage is applied to the third conductor.