| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to remove a defect like a function fail by removing a micro bridge due to the CD shake. CONSTITUTION: A capacitor dielectric layer(14) is formed on a lower electrode and a Ti/TiN layer. An upper electrode(16) is formed on a capacitor dielectric layer. The exposed upper electrode is etched using the upper electrode photoresist pattern. A metal polymer is formed on the sidewall of the upper electrode. The exposed capacitor dielectric layer is etched using the metal polymer as a mask. The exposed lower electrode is etched using a lower electrode photoresist pattern(22).
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