SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

Provided is a silicon carbide semiconductor device wherein contact resistance of an ohmic electrode is reduced and high withstand voltage characteristics are achieved.  A semiconductor device (1) is provided with a substrate (2) and a p+ region (25) as an impurity layer.  The substrate (2) is composed of silicon carbide, has a dislocation density of 5×103 cm-2 or less, and is first conductivity type (n-type).  The p+ region (25) is formed on the substrate (2), and the conductive impurity concentration of a second conductivity-type different from the first conductivity type is 1×1020 cm-3 or more but not more than 5×1021 cm-3.