发明名称 Nitride semiconductor substrate
摘要 A nitride semiconductor substrate has a first surface forming a principal surface of the substrate. A first edge is formed by beveling at least a portion of an edge of the first surface of the substrate. A scattering region is formed in at least a portion of the first edge. The scattering region scatters more external incident light than the first surface.
申请公布号 US2010084745(A1) 申请公布日期 2010.04.08
申请号 US20090379588 申请日期 2009.02.25
申请人 HITACHI CABLE, LTD. 发明人 MEGURO TAKESHI
分类号 H01L29/00;H01L29/20;H01L33/00 主分类号 H01L29/00
代理机构 代理人
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