| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent a dark current by removing a dangling bond of a damaged silicon surface. CONSTITUTION: A readout circuit is formed on a first substrate. A wiring(150) is electrically connected to the readout circuit and is formed on an interlayer dielectric layer. An image sensor(210) is formed on a second substrate. The second substrate is bonded on the interlayer dielectric layer. The second substrate is removed except the image sensor. The exposed surface of the image sensor without the second substrate is etched by a first wet etching process.
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