| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a means for obtaining high breakdown voltage of an extended drain or a drift region in a vertical HVFET. <P>SOLUTION: A vertical HVFET includes a pillar of semiconductor material arranged in a loop layout. The loop layout has at least two substantially parallel and substantially linear fillet sections each having a first width, and at least two rounded sections. The rounded sections have a second width narrower than the first width, a source region of a first conductivity type is disposed at or near a top surface of the pillar, and a body region of a second conductivity type is disposed in the pillar below the source region. First and second dielectric regions are disposed on opposite sides of the pillar, respectively, and the first dielectric region is laterally surrounded by the pillar, and the second dielectric region laterally surrounds the pillar. First and second field plates are disposed in the first and second dielectric regions, respectively. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
