发明名称 Improvements in or relating to silicon
摘要 1,067,036. Solid circuits. COMMISSARIAT A L'ENERGIE ATOMIQUE. Jan. 28, 1965 [Feb. 21, 1964], No. 3842/65. Addition to 979,844. Heading H1K. A solid circuit is constructed on a base of intrinsic silicon made by bombarding zonerefined low conductivity P-type silicon with thermal neutrons as described and claimed in U.K. Patent No. 979,844.
申请公布号 GB1067036(A) 申请公布日期 1967.04.26
申请号 GB19650003842 申请日期 1965.01.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人
分类号 C01B33/02;C22F1/16;H01L21/00;H01L21/261;H01L23/488;H01L27/00;H01L27/02;H01L27/04;H01L29/00 主分类号 C01B33/02
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