| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing solid silicon by which the solid silicon is obtained with higher yield. Ž<P>SOLUTION: In the method for producing the solid silicon by bringing a silicon melt 1 containing eutectic impurities into contact with a cooling body 10 to crystallize silicon 2 on the surface of the cooling body 10, the temperature of the silicon melt 1 is lowered with the lapse of the contact time of the silicon melt 1 with the cooling body 10. It is preferable that the temperature of the silicon melt 1 is lowered from a temperature exceeding the liquidus temperature (T<SB>L0</SB>) before the contact of the silicon melt 1 with the cooling body 10 to a temperature equal to or below the liquidus temperature (T<SB>L1</SB>) lowered with the elapse of the contact time of the silicon melt 1 with the cooling body 10. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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