发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
|
申请公布号 |
US2010087069(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20090571688 |
申请日期 |
2009.10.01 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
MIYA HIRONOBU;TOYODA KAZUYUKI;SAKAI MASANORI;MIZUNO NORIKAZU;KATO TSUTOMU;TAKEBAYASHI YUJI;ONO KENJI;MORIKAWA ATSUSHI;OKADA SATOSHI |
分类号 |
H01L21/316;C23C16/46;C23C16/513 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|