| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the efficiency of light extraction in a group III nitride-based compound semiconductor light-emitting device of a quantum well structure. <P>SOLUTION: In the group III nitride-based compound semiconductor light-emitting device 100 in 1.A, a light-emitting layer 13 in a multiplex quantum well structure (MQW) is formed. The light-emitting layer in this structure is achieved by laminating 7 sets of a well layer 132w formed of a In<SB>0.2</SB>Ga<SB>0.8</SB>N with a film thickness of about 3 nm and a barrier layer 131b formed of a protection layer 133c and a Al<SB>0.05</SB>Ga<SB>0.95</SB>N in a film thickness of 3 nm. For the formation of the light-emitting layer 13 in the multiplex quantum well structure (MQW), the well layer 132w and the protection layer 133c are formed at a temperature of ≤800°C, and the barrier layer 131b at a temperature of ≥850°C. The protection layer 133c has a composition having a band gap wider than that of the barrier layer 131b. <P>COPYRIGHT: (C)2010,JPO&INPIT |
