| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with high dimensional accuracy capable of reducing working man-hours, ensuring manufacture at a low cost, and effectively eliminating voids. <P>SOLUTION: The method includes: a step of producing a glass ceramic green sheet laminate 5 by combining a plurality of first glass ceramic green sheets 11 to 14, and a plurality of second glass ceramic green sheets 21 to 23 that start baking shrinkage at a higher temperature than that of the baking shrinkage termination of the first glass ceramic green sheets laminate; a step of laminating a heat sink 6 enough to cover the upper surface of the glass ceramic green sheet laminate 5 with a greater mass than a multilayer wiring substrate 50; and a step of producing the multilayer wiring substrate 50 with which the heat sink 6 is joined by baking the glass ceramic green sheet laminate 5 loaded with the cooling plate 6 at a temperature where the baking shrinkage of the second glass ceramic green sheets 21 to 23 takes place and the heat sink 6 does not melt. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
