| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent the generation of microtrenches to improve a vertically worked shape and a mask selection ratio in silicon etching treatment. Ž<P>SOLUTION: In a dry etching method, a silicon substrate W is mounted on a susceptor 12 disposed in a chamber 10 in which a vacuum can be formed and an etching gas is discharged in the chamber 10 to generate plasma and a first high frequency RF<SB>L</SB>for drawing ions is applied to the susceptor 12. A mixed gas of Cl<SB>2</SB>gas with O<SB>2</SB>gas is used as the etching gas. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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