摘要 |
<p>A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide electron tunnelling, e.g. Fowler-Nordheim tunnelling, to the phase change memory material (10). A contact (15) made of phase change memory material may also be provided. The dielectric barrier (12) is substantially uniform e.g. of substantially uniform thickness, e.g. = 5nm.</p> |
申请人 |
NXP B.V.;INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW;KOCHUPURACKAL, JINESH, B. P.;WOLTERS, ROBERTUS, A. M.;ZANDT, MICHAEL, A. A. |
发明人 |
KOCHUPURACKAL, JINESH, B. P.;WOLTERS, ROBERTUS, A. M.;ZANDT, MICHAEL, A. A. |