| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a trench, in a short time, which has no sub-trench and has a flat bottom through dry etching in which a trench made narrow to approximately≤200 nm is formed in a single crystal Si. SOLUTION: A substrate 7 has a layer to be etched which is made of a single crystal Si. An SF<SB>6</SB>/O<SB>2</SB>/Ar mixed gas is introduced in a chamber 3 and high-frequency electric power is supplied between an ICP coil 4 and a lower electrode 8 to carry out main etching. Before a target etching depth is reached, the etching gas is changed from the SF<SB>6</SB>/O<SB>2</SB>/Ar mixed gas to Cl<SB>2</SB>gas for additional etching. COPYRIGHT: (C)2010,JPO&INPIT
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