| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulation film etching apparatus that effectively prevents particles from depositing onto a substrate and is excellent in performance. Ž<P>SOLUTION: The substrate 9 is held on a substrate holder 2 in a process chamber 1, and gas for etching is introduced by a gas introduction system 3. Plasma is formed in a plasma formation means 4 by a means, and the insulation film on the surface of the substrate 9 is etched by action of active species and ions in the plasma. A control unit 8 introduces gas for cleaning by the gas introduction system 3 after completion of etching, forms plasma by the means 4 for plasma formation, and removes a film deposited on an exposure surface in the process chamber 1 by the action of plasma. A cooling trap 12 provided at a portion lower than a substrate holding surface is cooled forcedly, and a gas molecular having sedimentation is captured to deposit a number of films. The cooling trap 12 is replaceable. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
