发明名称 |
NONVOLATILE STORAGE DEVICE AND MANUFACTURING METHOD FOR THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an easily processable nonvolatile storage device having excellent operating characteristics, and also to provided a manufacturing method for the same. Ž<P>SOLUTION: The nonvolatile storage device has following parts on a substrate: a first wiring extending in a first direction; a second wiring extending in a second direction not parallel to the first direction; and a recording layer sandwiched between the first wiring and the second wiring so as to be reversibly shiftable between a first state and a second state by a current supplied via the first wiring and the second wiring. The recording layer has an inversely tapered shape in which a cross section parallel to the first/second directions becomes gradually larger as it goes close to the second wiring. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010080518(A) |
申请公布日期 |
2010.04.08 |
申请号 |
JP20080244441 |
申请日期 |
2008.09.24 |
申请人 |
TOSHIBA CORP |
发明人 |
NISHITANI KAZUTO;KINOSHITA SHIGERU;SASAKI KENJI |
分类号 |
H01L27/10;H01L27/105;H01L45/00;H01L49/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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