发明名称 NONVOLATILE STORAGE DEVICE AND MANUFACTURING METHOD FOR THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an easily processable nonvolatile storage device having excellent operating characteristics, and also to provided a manufacturing method for the same. Ž<P>SOLUTION: The nonvolatile storage device has following parts on a substrate: a first wiring extending in a first direction; a second wiring extending in a second direction not parallel to the first direction; and a recording layer sandwiched between the first wiring and the second wiring so as to be reversibly shiftable between a first state and a second state by a current supplied via the first wiring and the second wiring. The recording layer has an inversely tapered shape in which a cross section parallel to the first/second directions becomes gradually larger as it goes close to the second wiring. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010080518(A) 申请公布日期 2010.04.08
申请号 JP20080244441 申请日期 2008.09.24
申请人 TOSHIBA CORP 发明人 NISHITANI KAZUTO;KINOSHITA SHIGERU;SASAKI KENJI
分类号 H01L27/10;H01L27/105;H01L45/00;H01L49/00 主分类号 H01L27/10
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