| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus which mounts substrates on a rotation table along a rotation direction in a vacuum chamber, forms plural process areas of plural reaction gases reacting to each other separately along the rotation direction of the substrate, causes substrates to pass through these plural process areas in turn by rotating the table, and forms thin film on substrates by depositing a number of layers of reaction product, wherein by stably providing reaction gases onto the surface of the substrate, thin films with uniform thickness distributions in the surface or between surfaces, and also with an even and high quality, is provided. SOLUTION: An evacuation channel for evacuating reaction gas from each reaction gas process area is provided separately, and a separation area is provided between these reaction gas process areas, and a flow rate of the gas evacuated through each evacuation channel and a pressure in the vacuum chamber are controlled so that a gas flow rate to a substrate is kept constant. COPYRIGHT: (C)2010,JPO&INPIT
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