发明名称 PLASMA REACTOR COMPRISING DEPOSITION SHIELD
摘要 PROBLEM TO BE SOLVED: To provide a reactor with a long operation period by reducing the frequency of maintenance and cleaning to have. SOLUTION: This reactor 20 includes a housing 22 and an etching chamber 24. A wafer 26 is placed in a chuck connected with a bottom electrode 28. The chamber 24 includes a side face peripheral electrode 30 allowed to be grounded or to generate a floating potential as a result of a plasma generated in the chamber 24, and a shield 50 for preventing the deposition of a material from the wafer 26 onto an electrode 32 or a window 38 for connecting the electrode 32 with a reaction chamber 51 of the reactor 20 along a lookout path, for example by sputtering. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010080972(A) 申请公布日期 2010.04.08
申请号 JP20090269589 申请日期 2009.11.27
申请人 TEGAL CORP 发明人 DEORNELLAS STEPHEN P;DITIZIO ROBERT A
分类号 H01L21/302;H01L21/3065;C23C14/56;C23C16/00;C23F1/02;H01J37/32;H01L21/00;H05H1/00 主分类号 H01L21/302
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