| 摘要 |
In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, the method including: loading a substrate into a process chamber; forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; unloading the substrate from the process chamber; heating an inside of the process chamber; decreasing an inside temperature of the process chamber after the heating of the inside of the process chamber; and introducing cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the decreasing of the inside temperature of the process chamber.
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