A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N- layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.
申请公布号
WO2010039842(A1)
申请公布日期
2010.04.08
申请号
WO2009US59042
申请日期
2009.09.30
申请人
IXYS CORPORATION;SEOK, KYOUNG-WOOK;TSUKANOV, VLADIMIR