发明名称 INSULATED GATE BIPOLAR TRANSISTOR
摘要 A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N- layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.
申请公布号 WO2010039842(A1) 申请公布日期 2010.04.08
申请号 WO2009US59042 申请日期 2009.09.30
申请人 IXYS CORPORATION;SEOK, KYOUNG-WOOK;TSUKANOV, VLADIMIR 发明人 SEOK, KYOUNG-WOOK;TSUKANOV, VLADIMIR
分类号 H01L29/10 主分类号 H01L29/10
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