| 摘要 |
PROBLEM TO BE SOLVED: To reduce chipping and crack even when a semiconductor substrate is repeatedly used in a manufacturing process of an SOI substrate, or to raise use efficiency of one semiconductor substrate and to reduce the chipping and the crack, in the manufacturing process of the SOI substrate. SOLUTION: In the manufacturing process of the SOI substrate, after repeatedly using the semiconductor substrate to be used as a bond substrate, several times, a laminated substrate is formed by sticking the semiconductor substrate with other second single crystal semiconductor substrate at a stage that a chamfered part of the semiconductor substrate disappears or before the chamfered part disappears, and is used as the bond substrate after forming the chamfered part on the laminate substrate. COPYRIGHT: (C)2010,JPO&INPIT |
