| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method by which a film is stably formed, and a ruthenium film of high quality can be obtained. <P>SOLUTION: The chemical vapor deposition method includes: a process for vaporizing a ruthenium compound such as tetra(μ-trifluoroacetate)di(acetone)diruthenium, tetra(μ-pentafluoropropionate)di(acetone)diruthenium, supplying the vaporized ruthenium compound to a reaction chamber, and depositing on a base; a process for stopping supply of the vaporized ruthenium compound to the reaction chamber, and removing the vaporized ruthenium compound remaining in the reaction chamber; and a process for forming a ruthenium film by dissolving the deposited ruthenium compound on the base. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
