| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve reliability of a nonvolatile semiconductor memory. <P>SOLUTION: This nonvolatile semiconductor memory is equipped with: a memory cell unit including a plurality of memory cells; a plurality of word lines WL0-WL7; a potential generation circuit for generating the potential to be supplied to the word lines WL0-WL7; and an operation control circuit for controlling the operation of the potential generation circuit to execute a writing loop at least once, which is constituted of a data write-in with respect to a selection cell and a verify. When the writing loops are executed two or more times, the operation control circuit controls the operation of the potential generation circuit to generate a non-selective potential Vpass, or a potential Vq smaller than the non-selective potential Vpass at least at one generation part of generation parts connected to a plurality of non-selective word lines WL1-WL8, and the writing loop using the potential Vq and the writing loop un-using the potential Vq are executed and the data are written into the selection cell. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
