| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively suppress the deposition of a polycrystal of silicon carbide on the bottom part of a raw material for sublimation while preventing the carbonization of the surface of a silicon carbide single crystal. Ž<P>SOLUTION: In the manufacturing apparatus 1 of the silicon carbide single crystal, the maximum temperature region Stmax in the temperature distribution naturally formed by a dielectric heating coil 30 is made responsive to the bottom part 52 of a reaction vessel body 50 by making the length of the dielectric heating coil 30 longer than that of the graphite-made crucible 10 in the vertical direction in the cross-sectional view of the graphite-made crucible 10 in the vertical direction and arranging the bottom part 52 of the reaction vessel body 50 in the vicinity of the center part of the dielectric heating coil 30. In the manufacturing apparatus 1 of the silicon carbide single crystal, the maximum temperature region Stmax in the graphite-made crucible 10 is changed with the sublimation of the raw material 80 for sublimation from the bottom part 51 of the graphite-made crucible 10 toward the upper surface part 80a of the raw material 80 for sublimation which is opposed to the seed crystal 70. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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