A TRANSISTOR WITH EMBEDDED SI/GE MATERIAL HAVING REDUCED OFFSET TO THE CHANNEL REGION

摘要

A strain inducing semiconductor alloy may be formed on the basis of cavities which may have a non-rectangular shape, which may be maintained even during corresponding high temperature treatments, by providing an appropriate protection layer, such as a silicon dioxide material. Consequently, a lateral offset of the strain inducing semiconductor material may be reduced, while nevertheless providing for a sufficient thickness of corresponding offset spacers during the cavity etch process, thereby preserving gate electrode integrity. For instance, p-channel transistors may have a silicon/germanium alloy with a hexagonal shape thereby significantly enhancing the overall strain transfer efficiency.