Sensor, particularly high pressure sensor, has pressure chamber element, carrier element and oscillating circuit, where pressure chamber element comprises pressure membrane

摘要

The sensor (1) has a pressure chamber element (2), a carrier element (3) and an oscillating circuit. The pressure chamber element comprises a pressure membrane (4), and the oscillating circuit comprises an electrode (5), a counter electrode (6) and an inductance (7). The electrode is arranged on the pressure membrane, and the counter electrode is arranged on the carrier element. The carrier element has a bulge (8) for forming a closed cavern (8') together with the electrode. The carrier element is made of silicon, particularly silicon chip. An independent claim is included for a method for producing a sensor.