CHEMICAL MECHANICAL POLISHING APPARATUS, CHEMICAL MECHANICAL POLISHING METHOD, AND CONTROL PROGRAM

摘要

PROBLEM TO BE SOLVED: To prevent occurrence of a scratch and dishing at the time of polishing copper deposited on an interlayer insulating film formed of an organic low-k film in a damascene process.

SOLUTION: A rotation center axis of a rotation head 10 to which a polishing pad 12 is stuck and a rotation center axis of a rotation table 14 on which a semiconductor wafer 100 is faced up and installed are arranged on the same vertical line N in a CMP apparatus. The rotation head 10 is dropped and the polishing pad 12 is made to abut on the semiconductor wafer 100 on the rotation table 14 while the rotation head 10 and the rotation table 14 are spin-rotated in the same direction. The polishing pad 12 is prevented from being rubbed in a reverse direction in a whole region on a surface of the semiconductor wafer 100.

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