| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing breakdown of a switching element by a surge current without complicating its structure. Ž<P>SOLUTION: A first deep trench 6 is formed in an active layer 5 of the semiconductor device 1. A body region 11 and a drift region 12 are formed in an active region 9. A source region 13 is formed at a surface layer section of the body region 11. A drain region 15 is formed at a surface layer section of the drift region 12. A second deep trench 20 is formed in a field region 10. The inner surface of the second deep trench 20 is covered with a pair of silicon oxide films 21 to fully fill the inside with polysilicon 22. The source region 13 is electrically connected to the first semiconductor region 23 between the first and second deep trenches 6, 20. The drain region 15 is electrically connected to a second semiconductor region 28 outside the second deep trench 20. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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