| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a trench isolation for improving flatness of an insulating film formed on buried polysilicon. Ž<P>SOLUTION: A trench 19 isolating a predetermined region of a silicon substrate 11 is formed using a mask of a nitride film 14, and an oxide film 21 is formed at a sidewall of the trench 19. After a polysilicon film 22 is formed filling the trench 19 and covering the nitride film 15, the polysilicon film 22 is oxidized to form polysilicon oxide 23. Removal by the thickness T3 of the polysilicon oxide 23 covering the nitride film 15 is carried out by etching, so that the polysilicon oxide 23 formed on the trench 19 (where the nitride film 15 is not formed) is not removed as much as possible. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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