发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus with excellent energy efficiency. Ž<P>SOLUTION: An introduction port 53 is perforated at the upper, middle and lower stages of a shield for shutting up microwaves, one end of a waveguide 54 is connected to the respective introduction ports 53, and microwave sources 55A, 55B and 55C for supplying the microwaves are connected to the other end of the waveguide 54. A heat insulation tube 36 is installed inside the shield 52, and the heat insulation tube 36 is formed so as to carry in/away a boat 42 holding a plurality of wafers. A cascade temperature sensor 57 to which three thermo-couples are inserted is laid in the heat insulation tube 36, and a temperature measuring piece composed of silicon is fixed to the hot junctions of the respective thermo-couples respectively. The temperature measuring device of the thermo-couples is connected to the controller 56 of the microwave sources 55A, 55B and 55C. A reflecting plate 62 for uniformizing the temperature distribution of the wafer without letting the heat of the wafer heated by microwave energy escape is provided near the three introduction ports 53. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010080537(A) 申请公布日期 2010.04.08
申请号 JP20080244776 申请日期 2008.09.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIRATORI WAKAKO;TOYODA KAZUYUKI;YASHIMA SHINJI;SUEYOSHI MAMORU;OKUNO MASAHISA
分类号 H01L21/268;C23C16/46;H01L21/22;H01L21/31 主分类号 H01L21/268
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