| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively suppress the deposition of a polycrystal of silicon carbide on the surface part or the bottom part of a raw material for sublimation. Ž<P>SOLUTION: The manufacturing apparatus 1 for the silicon carbide single crystal has a graphite-made crucible 10, a quartz tube 20 covering at least the side wall of the graphite-made crucible 10, and a dielectric heating coil 30 arranged on the outer circumference of the quartz tube 20. The graphite-made crucible 10 is fixed inside the quartz tube 20 by a supporting rod 40. The graphite-made crucible 10 is covered with a heat insulating material 11. The graphite-made crucible 10 has a reaction vessel body 50 and a cap part 60. The reaction vessel body 50 houses a seed crystal 70 containing silicon carbide and the raw material 80 for sublimation which is used for the growth of the seed crystal 70. A heat insulating layer 90 is provided on the bottom part of the graphite-made crucible 10. The heat insulating layer 90 is in close contact with the bottom of the graphite-made crucible 10. The raw material 80 for sublimation is arranged on the heat insulating layer 90 to be in contact with the heat insulating layer 90. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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