| 摘要 |
The invention relates to an ESD protection device comprising: a first contact (10) and a second contact (20), and an electrical node (12); a bipolar transistor (6) having a base, an emitter, and a collector, the base and emitter forming a base-emitter junction, the base and collector forming a base-collector junction, the emitter being connected to the first contact (10), the collector being connected to the second contact (20), the base being connect to the electrical node (12); a first diode (1) connected between the electrical node (12) and the first contact (10), the first diode (1) comprising a first junction arranged in the same direction as the base-emitter junction, and—a second diode (2) connected between the electrical node (12) and the second contact (20), in anti-series with the first diode (1) on a path from the first contact (10) to the second contact (20), the second diode (2) comprising a second junction arranged in the same direction as the base-collector junction, wherein the bipolar transistor (6) is dimensioned to have such a current gain (&bgr;) that the voltage-current characteristic of the ESD protection device, measured between the first (10) and second contact (20), exhibits a voltage snap-back effect (SNP) at its trigger voltage (Vtrig). The voltage snap-back effect (SNP) results in a lower clamping voltage of the ESD protection device. The invention further relates a semiconductor device and an integrated system in a package comprising said ESD protection device.
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