PHOTOMASK BLANK, PHOTOMASK, AND PROCESS FOR PRODUCING SAME

摘要

A photomask blank for use in producing a photomask for exposure with an ArF excimer laser.  The photomask blank is intended to be applied to the 32-nm DRAM half-pitch (hp) and succeeding generations in the semiconductor design rule. The photomask blank is for use in producing a photomask to which an exposure light having a wavelength not longer than 200 nm is applied and is for use in the 32-nm half-pitch (hp) and succeeding generations according to design specifications for semiconductor devices. The photomask blank is characterized by comprising a light-transmitting substrate (1) and, formed thereon in the following order, a light-shielding film (10) and an etching-mask film (20), the etching-mask film (20) being processed using a resist film (50) which is to be formed on the film (20) and has a thickness of 100 nm or smaller. The photomask blank is further characterized in that the etching-mask film (20) contains chromium and at least one component selected from nitrogen and oxygen, has a chromium content of 50 at.% or lower, and has a thickness of 5-20 nm, and the light-shielding film (10) contains molybdenum silicide, has a molybdenum content of 9-40 at.%, and has a thickness of 60 nm or smaller.