发明名称 SPUTTERING APPARATUS AND SPUTTERING METHOD
摘要 <p>A film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed, in the case of forming a magnetic field on a processing surface of a substrate (21) and forming a magnetic film by oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with: a substrate holder (22) which rotatably holds the substrate (21) in the surface direction of the substrate surface to be processed; a substrate magnetic field forming apparatus (30), which is arranged on the circumference of the substrate (21) and forms a magnetic field on the substrate (21) surface to be processed; a cathode (41) which is arranged diagonally above the substrate (21) and is supplied with discharge power; a position detecting apparatus (23) which detects the rotating position of the substrate (21); and a control apparatus (50) which adjusts the rotating speed of the substrate (21) in accordance with the rotating position detected by the position detecting apparatus (23).</p>
申请公布号 WO2010038421(A1) 申请公布日期 2010.04.08
申请号 WO2009JP04973 申请日期 2009.09.29
申请人 CANON ANELVA CORPORATION;KITADA, TORU;WATANABE, NAOKI;NAGAI, MOTONOBU;SUENAGA, MASAHIRO;KONNO, TAKEO 发明人 KITADA, TORU;WATANABE, NAOKI;NAGAI, MOTONOBU;SUENAGA, MASAHIRO;KONNO, TAKEO
分类号 C23C14/34;H01F41/18 主分类号 C23C14/34
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