| 摘要 |
<p>A magnetic path mechanism, a magnetron sputtering cathode comprising the mechanism, and the manufacturing method of the same are provided. Besides the outer-ring permanent magnets (27), two sets of bias permanent magnets (25,26) are added to the magnetic path mechanism. The two sets of permanent magnets are provided inside the outer-ring permanent magnets and are individually driven to rotate. The two sets of permanent magnets are added into the magnetostatic field produced by the outer-ring permanent magnets to adjust the distribution of the magnetic field in the surface space of target. A controllable spacial magnetic field is distributed in the different areas over the target to produce different plasma concentrations. The different areas of the target are sputtered selectively, the film thickness which is monotonously variational in the radial direction is obtained. Simultaneously the uniformity of the film thickness is improved, and the utilization ratio of the target is increased.</p> |
